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| SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2189 (F10W50VX2) 500V 10A FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P Case E-pack (Unit : mm) Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Conditions Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage Gate-Source Voltage VGSS ID Continuous Drain CurrentDC IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25 TOR Recommended torque : 0.5Nm Mounting Torque Ratings -55150 150 500 30 10 30 10 70 10 0.8 Unit V A W A Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2189 ( F10W50VX2 ) Min. 500 Typ. Max. 250 0.1 2.4 2.5 6.3 0.8 3.0 Unit V A ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, VGS = 10V, RL = 30 30 890 70 200 70 140 S 1.0 3.5 V 1.5 1.78 / nC pF 110 220 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2189 20 Tc = -55C Transfer Characteristics 25C 15 Drain Current ID [A] 100C 150C 10 5 VDS = 25V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2189 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] ID = 5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2189 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2189 100 Safe Operating Area 10 100s 200s 1 R DS(ON) limit Drain Current ID [A] 1ms 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2189 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2189 10000 Capacitance Capacitance Ciss Coss Crss [pF] 1000 Ciss Coss 100 Crss f=1MHz Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2189 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2189 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VGS VDD = 400V 300 200V 100V 15 10 200 5 100 ID = 10A TYP 0 0 10 20 30 40 0 50 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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